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>Temperature dependence of dielectric polarization and strain behaviors for rhombohedral PIMNT single crystal with different crystallographic orientations
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Temperature dependence of dielectric polarization and strain behaviors for rhombohedral PIMNT single crystal with different crystallographic orientations
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机译:不同晶体取向的菱面体PIMNT单晶的介电极化和应变行为的温度依赖性
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摘要
In this study, the dielectric, ferroelectric and strain behaviors of 0.35Pb(In 1/2Nb 1/2)O 3-0.35Pb(Mg 1/3Nb 2/3)O 3-0.30PbTiO 3 (0.35PIN-0.35PMN-0.30PT or PIMNT35/35/30) single crystal with different crystallographic orientations were investigated as a function of temperature. The Curie temperature T C and rhombohedral to tetragonal phase transition temperature T rt were risen up to 188 °C and 120 °C, respectively. The coercive field E C and remnant polarization P r for 〈0 0 1〉 and 〈1 1 0〉 oriented crystals were found to be 5.8 kV/cm, 27.5 μC/cm 2 and 8.5 kV/cm, 38.7 μC/cm 2 at room temperature, respectively. The polarization data were obtained from the hysteresis loops of the crystal measured in a wide temperature range. The unipolar strain level was found to be 0.65% at an electric field of 32 kV/cm, with piezoelectric strain coefficient d 33 ∼ 2000 pC/N for 〈0 0 1〉 oriented crystal. Besides, the intermediate metastable state was induced at an electric field of 12.5 kV/cm for 〈1 1 0〉 oriented crystal, which can be utilized in large power transducers such as sonar and actuator.
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