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>Transparent indium tin oxide electrodes on muscovite mica for high-temperature-processed flexible optoelectronic devices
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Transparent indium tin oxide electrodes on muscovite mica for high-temperature-processed flexible optoelectronic devices
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机译：白云母云母上的透明氧化铟锡电极，用于高温加工的柔性光电器件
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摘要
Sn-doped In2O3 (ITO) electrodes were deposited on transparent and flexible muscovite mica. The use of mica substrate makes a high-temperature annealing process (up to 500 °C) possible. ITO/mica retains its low electric resistivity even after continuous bending of 1000 times on account of the unique layered structure of mica. When used as a transparent flexible heater, ITO/mica shows an extremely fast ramping (15 s) up to a high temperature of over 438 °C. When used as a transparent electrode, ITO/mica permits a high-temperature annealing (450 °C) approach to fabricate flexible perovskite solar cells (PSCs) with high efficiency.
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