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Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT

机译：基于CVD MoS2和超高k栅极电介质PZT的低压高开/关比场效应晶体管

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Zhou C; Wang X; Raju S; Lin Z; Villaroman D; Huang B; Chan HLW; Chan M; Chai Y;
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1. Low-operating voltage organic field-effect transistors with high-k cross-linked cyanoethylated pullulan polymer gate dielectrics [J] . Wentao Xu, Shi-Woo Rhee Journal of Materials Chemistry: An Interdisciplinary Journal dealing with Synthesis, Structures, Properties and Applications of Materials, Particulary Those Associated with Advanced Technology . 2009,第29期

机译：具有高k交联的氰乙基化支链淀粉聚合物栅极电介质的低工作电压有机场效应晶体管
2. Parylene-C and high-k polymer bilayer gate dielectric for low-operating voltage organic field-effect transistors [J] . Ashimine T, Onoue T, Yasuda T, Molecular crystals and liquid crystals . 2007,第0期

机译：用于低工作电压有机场效应晶体管的Parylene-C和high-k聚合物双层栅极电介质
3. Low-Operating-Voltage Organic Field-Effect Transistors with Poly-p-Xylylene/High-k Polymer Bilayer Gate Dielectric [J] . Tomoaki Onoue, Ichiro Nakamura, Yukio Sakabe, Japanese Journal of Applied Physics. Part 2, Letters & Express Letters . 2006,第29a32期

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4. Non-planar, multi-gate InGaAs quantum well field effect transistors with high-K gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic applications [C] . 2010 IEEE International Electron Devices Meeting . 2010

机译：非平面，多栅极InGaAs量子阱场效应晶体管，具有高K栅极电介质和超规模的栅-漏/栅-源隔离，适用于低功耗逻辑应用
5. Technology development and study of rapid thermal CVD high-k gate dielectrics and CVD metal gate electrode for future ULSI MOSFET device integration: Zirconium oxide, and hafnium oxide. [D] . Lee, Choong-Ho. 2003

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7. Correction to: Device physics and design of hetero-gate dielectric tunnel field-effect transistors with different low/high-k EOT ratios [O] . Chun-Hsing Shih, Nguyen Dang Chien, Huu-Duy Tran, 2020

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Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT

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