Energy-level structure of nitrogen-doped graphene quantum dots

摘要

The doping of carbon-based materials is of great importance due to its ability to modulate their optical, electrical and optoelectronic properties. Nitrogen-doped graphene quantum dots (N-GQDs) have received significant attention due to their superior electrocatalytic activity, optical properties and biocompatibility. The energy-level structure of N-GQDs remains unknown, which hinders the development of N-GQDs for various applications. Here, we report a one-pot synthesis method to prepare large-quantity N-GQDs at room temperature and atmospheric pressure under a prolonged reaction time. Using this approach, we can effectively dope N into the N-GQDs. As revealed by electron energy loss spectroscopy, N-doping introduces a new energy level into the electronic structure, which is responsible for tuning the optical properties of the N-GQDs.