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Synthesis and memory effect study of Ge nanocrystals embedded in LaAlO₃ high-k dielectrics

机译:LaAlO₃高k电介质中嵌入的Ge纳米晶体的合成和存储效应研究

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摘要

A floating gate memory structure utilizing Ge nanocrystals embedded in LaAlO₃ (LAO) high-k dielectric films has been fabricated by pulsed-laser deposition. A cross-sectional high-resolution transmission electron microscopy study revealed that the floating gate structure contains 5-nm-diam spherelike Ge nanocrystals embedded in amorphous LAO. A significant memory effect with a very high density of charge storage up to 2×10¹ ³/cm² in the Ge nanocrystals and a maximum flat band voltage shift of 3.2 V have been achieved for the trilayer structure of LAO(8 nm)/Ge/LAO(3 nm)/Si. The memory structure utilizing the Ge nanocrystals grown in 1 min showed excellent charge retention characteristics, whereas the decay in memory capacitance after 10⁴ s of stress under a flat band voltage was only 8%. These results suggest that this memory structure utilizing Ge nanocrystals embedded in a LAO dielectric offers a high potential for the further scaling of floating gate memory devices. In addition, the effects of Ge growth time, and thus the size and density of the Ge nanocrystals, to the charge storage and charge retention characteristics were also studied.
机译:已经通过脉冲激光沉积制造了利用嵌入LaAlO 3(LAO)高k介电膜中的Ge纳米晶体的浮栅存储结构。横截面高分辨率透射电子显微镜研究显示,浮栅结构包含嵌入非晶LAO中的5nm直径的球状Ge纳米晶体。对于LAO(8 nm)/ Ge /的三层结构,Ge纳米晶体具有显着的记忆效应,具有非常高的电荷存储密度,高达2×10 13³/ cm 2,最大平带电压偏移为3.2V。 LAO(3 nm)/ Si。利用在1分钟内生长的Ge纳米晶体的存储结构显示出优异的电荷保持特性,而在平坦带电压下10 s应力后,存储电容的衰减仅为8%。这些结果表明,利用嵌入在LAO电介质中的Ge纳米晶体的这种存储结构为进一步缩小浮栅存储器件提供了高潜力。另外,还研究了Ge生长时间以及Ge纳米晶体的尺寸和密度对电荷存储和电荷保持特性的影响。

著录项

  • 作者

    Lu, XB; Lee, PF; Dai, J;

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  • 年度 2005
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  • 原文格式 PDF
  • 正文语种 en
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