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Minority carrier lifetime variations associated with misfit dislocation networks in heteroepitaxial GaInP

机译：与异质外延GaInP中错配位错网络相关的少数载流子寿命变化

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The article of record as published may be found at http://dx.doi.org/10.1088/0268-1242/25/5/055017

机译：已发布的记录文章可以在http://dx.doi.org/10.1088/0268-1242/25/5/055017中找到

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Haegel Nancy M.; Williams Scott E.; Frenzen C.L.; Scandrett Clyde;
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年度 2010
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1. Minority carrier lifetime variations associated with misfit dislocation networks in heteroepitaxial GaInP [J] . Nancy M Haegel, Scott E Williams, C L Frenzen, Semiconductor science and technology . 2010,第5期

机译：与异质外延GaInP中错配位错网络相关的少数载流子寿命变化
2. Effective lifetimes of minority carriers in time-resolved photocurrent and photoluminescence of a doped semiconductor: Modelling of a GaInP solar cell [J] . Su Z. C., Xu S. J. Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion . 2019,第期

机译：少数型载体的有效寿命在时间分辨的光电流和掺杂半导体的光致发光：GaInP太阳能电池的建模
3. Enhancement of minority carrier lifetime of GaInP with lateral composition modulation structure grown by molecular beam epitaxy [J] . K. W. Park, C. Y. Park, Sooraj Ravindran, Journal of Applied Physics . 2014,第4期

机译：通过分子束外延生长的横向成分调制结构提高GaInP的少数载流子寿命
4. Measurement of minority carrier diffusion length and lifetime in SOI devices by flying spot laser scanner as a function of residual misfit [C] . Baumgart, H., Egloff, . 1993

机译：飞点激光扫描仪根据残余失配来测量SOI器件中少数载流子扩散长度和寿命
5. Microwave Instrumentation and Sensing Techniques for Quantum Efficiency and Minority-Carrier Lifetime Measurements [D] . Lu, Kyle Benjamin. 2017

机译：量子效率和少数载体寿命测量的微波仪表和传感技术
6. Minority Carrier Lifetime Measurements for Contactless Oxidation Process Characterization and Furnace Profiling [O] . Christian Bscheid, Christian R. Engst, Ignaz Eisele, 2019

机译：用于非接触氧化过程表征和炉分析的少数载流子寿命测量
7. Silicon Minority-carrier Lifetime Degradation During Molecular Beam Heteroepitaxial III-V Material Growth [O] . Ding Laura, Zhang Chaomin, Nærland Tine Uberg, 2016

机译：分子束异质外延III-V材料生长过程中硅少数载流子的寿命退化

Minority carrier lifetime variations associated with misfit dislocation networks in heteroepitaxial GaInP

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