2-D modeling of GaN HEMTs incorporating the piezoelectric effect

摘要

Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are microwave power devices that promise to revolutionize the capability of Navy radar systems. The Office of Naval Research is currently finding basic research of developing microwave power amplifiers for use in future radar systems. This thesis incorporates piezoelectric (PZ) equations in the Silvaco Atlas software for modeling GaN/AlGaN structures. The PZ effect enhances a two dimensional electron gas at the GaN/AIGaN interface due to stress induced polarization.