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Passive Q-switching of short-length Tm3+-doped silica fiber lasers by polycrystalline Cr2+:ZnSe microchips

机译:多晶Cr 2 + :ZnSe微芯片对掺短波长Tm 3 + 的石英光纤激光器的无源Q开关

摘要

We demonstrate passive Q-switching of short-length double-clad Tm3+-doped silica fiber lasers near 2 mu m pumped by a laser diode array (LDA) at 790 nm. Polycrystalline Cr2+:ZnSe microchips with thickness from 0.3 to 1 mm are adopted as the Q-switching elements. Pulse duration of 120 ns, pulse energy over 14 mu] and repetition rate of 53 kHz are obtained from a 5-cm long fiber laser. As high as 530 kHz repetition rate is achieved from a 50-cm long fiber laser at similar to 10-W pump power. The performance of the Q-switched fiber lasers as a function of fiber length is also analyzed. (c) 2008 Elsevier B.V. All rights reserved.
机译:我们演示了在790 nm处由激光二极管阵列(LDA)泵浦的2微米附近的短长度双包层Tm3 +掺杂石英光纤激光器的无源Q开关。 Q开关元件采用厚度为0.3到1 mm的多晶Cr2 +:ZnSe微芯片。从5cm长的光纤激光器获得120ns的脉冲持续时间,超过14μ的脉冲能量和53kHz的重复频率。用50厘米长的光纤激光器以10瓦的泵浦功率实现高达530 kHz的重复率。还分析了调Q光纤激光器的性能随光纤长度的变化。 (c)2008 Elsevier B.V.保留所有权利。

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