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Impact of polarized illumination on high NA imaging in ArF immersion lithography at 45nm node

机译：偏振照明对45nm节点ArF浸没光刻法中高NA成像的影响

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Qiongyan Yuan; Xiangzhao Wang; Zicheng Qiu;
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年度 2009
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入库时间 2022-08-20 20:55:53

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1. Impact of polarized illumination on high NA imaging in ArF immersion lithography at 45 nm node [J] . Yuan QY, Wang XZ, Qiu ZC Optik: Zeitschrift fur Licht- und Elektronenoptik: = Journal for Light-and Electronoptic . 2009,第7期

机译：偏振照明对45 nm节点ArF浸没光刻法中高NA成像的影响
2. Simulation of the 45-nm half-pitch node with 193-nm immersion lithography-imaging interferometric lithography and dipole illumination [J] . Abani Biswas, Steven R. J. Brueck Journal of Microlithography, Microfabrication, and Microsystems. (JM3) . 2004,第1期

机译：用193nm浸没式光刻成像干涉光刻和偶极子照明对45nm半节距节点进行仿真
3. Simulation of the 45-nm half-pitch node with 193-nm immersion lithography-imaging interferometric lithography and dipole illumination [J] . Abani Biswas, Steven R. J. Brueck Journal of Microlithography, Microfabrication, and Microsystems. (JM3) . 2004,第1期

机译：用193nm浸没式光刻成像干涉光刻和偶极子照明对45nm半节距节点进行仿真
4. RET Masks for Patterning 45nm Node Contact Hole Using ArF Immersion Lithography [C] . Michael Hsu, J. Fung Chen, Doug Van Den Broeke, Photomask and Next-Generation Lithography Mask Technology XIII pt.1 . 2006

机译：使用ArF浸没光刻技术对45nm节点接触孔进行图案化的RET掩模
5. Characterizing polarized illumination in high numerical aperture optical lithography with phase shifting masks. [D] . McIntyre, Gregory Russell. 2006

机译：使用相移掩模在高数值孔径光刻中表征偏振照明。
6. Immersion Mirau interferometry for label-free live cell imaging in an epi-illumination geometry [O] . Oleksandra V. Lyulko, Gerhard Randers-Pehrson, David J. Brenner -1

机译：浸入米拉·干涉测量在EPI照明几何形状中没有标记的活细胞成像
7. Water Immersion Optical Lithography for the 45nm Node [O] . Bruce W. Smith, Hoyoung Kang, Anatoly Bourov, 2013

机译：用于45nm节点的水浸光学光刻
8. Modeling and Experimental Verification of Illumination and Diffraction Effects onImage Quality in X-ray Lithography [R] . Hector, S. D., Schattenburg, M. L., Anderson, E. H., 1992

机译：X射线光刻中图像质量的光照和衍射效应建模与实验验证

Impact of polarized illumination on high NA imaging in ArF immersion lithography at 45nm node

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