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>Growth, etching morphology and spectra of LiAlO2 crystal
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Growth, etching morphology and spectra of LiAlO2 crystal
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机译:LiAlO 2 inf>晶体的生长,刻蚀形态和光谱
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摘要
gamma-LiAlO2 single crystal was successfully grown by Czochralski method. The crystal quality was characterized by X-ray rocking curve and chemical etching. The effects of air-annealing and vapor transport equilibration (VTE) on the crystal quality, etch pits and absorption spectra of LiAlO2 were also investigated in detail. The results show that the as-grown crystal has very high quality with the full width at half maximum (FWHM) of 17.7-22.6 arcsec. Dislocation density in the middle part of the crystal is as low as about 3.0 x 10(3) cm(-2). The VTE-treated slice has larger FWHM value, etch pits density and absorption coefficient as compared with those of untreated and air-annealed slices, which indicates that the crystal quality became inferior after VTE treatment. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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机译:通过直拉法成功地生长了γ-LiAlO2单晶。通过X射线摇摆曲线和化学蚀刻来表征晶体质量。还详细研究了空气退火和蒸汽传输平衡(VTE)对LiAlO2晶体质量,蚀刻坑和吸收光谱的影响。结果表明,所生长的晶体具有很高的质量,其半峰全宽(FWHM)为17.7-22.6 arcsec。晶体中部的位错密度低至约3.0 x 10(3)cm(-2)。经VTE处理的切片与未经处理和空气退火的切片相比,具有更大的FWHM值,蚀刻点密度和吸收系数,这表明经VTE处理后晶体质量变差。 (C)2008 WILEY-VCH Verlag GmbH&Co.KGaA,Weinheim。
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