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Anisotropic characteristics of a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by MOCVD

机译：通过MOCVD在γ-LiAlO2（3 0 2）衬底上生长的a面GaN膜的各向异性特征

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Tingting Jia; Shengming Zhou; Hao Teng; Hui Lin; Jun Wang; Jianqi Liu; Yongxin Qiu; Jun Huang; Kai Huang; Feng Bao; Ke Xu;
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1. Nonpolar a-plane GaN films grown on γ-LiA1O_2 (3 0 2) substrates by low-pressure MOCVD [J] . Tingtingjia, Shengming Zhou, Hao Teng, Journal of Crystal Growth . 2011,第1期

机译：通过低压MOCVD在γ-LiA1O_2（3 0 2）衬底上生长的非极性a面GaN膜
2. Polarized Raman scattering studies of nonpolar a-plane GaN films grown on r-plane sapphire substrates by MOCVD [J] . Haiyong Gao, Fawang Yan, Jinmin Li, Physica Status Solidi. A, Applications and Materials Science . 2006,第15期

机译：通过MOCVD在r面蓝宝石衬底上生长的非极性a面GaN薄膜的偏振拉曼散射研究
3. Comparative Study on MOCVD Growth of a-Plane GaN Films on r-Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers [J] . J.N. DAI, Z.H. WU, C.H. YU, Journal of Electronic Materials . 2009,第9期

机译：使用GaN，AlGaN和AlN缓冲层在r面蓝宝石衬底上进行a面GaN膜的MOCVD生长的比较研究
4. Effects of the Al composition in AlGaN buffer layer on a-plane GaN films grown on r-plane sapphire substrate by MOCVD [C] . Qiang Zhang, Z. H. Wu, Jiangnan Dai, Photonics and optoelectronics meetings;Conference on optoelectronic devices and integration;POEM; 20081124-27;20081124-27;20081124-27; Wuhan(CN);Wuhan(CN);Wuhan(CN) . 2008

机译：MOCVD在r面蓝宝石衬底上生长的a面GaN膜上AlGaN缓冲层中Al组成的影响
5. MOCVD Grown InP and Related Thin Films on Silicon Substrates for Electron and Photonic Devices Applications. [D] . Zhong, Zhenyu. 2010

机译：在电子和光子器件应用的硅基板上MOCVD生长的InP和相关薄膜。
6. Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates [O] . Yu-Chiao Lin, Ikai Lo, Hui-Chun Shih, 2017

机译：在γ-LiAlO2（100）衬底上生长的M平面GaN薄膜的生长和表征
7. Nonpolar a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by low-pressure MOCVD [O] . Tingting Jia, Shengming Zhou, Hao Teng, 2011

机译：通过低压MOCVD在γ-LiAlO2（3 0 2）衬底上生长的非极性a面GaN膜

Anisotropic characteristics of a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by MOCVD

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