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Nouveaux résonateurs haute-fréquence à Ondes de Volume dans les films minces piézoélectriques pour les Applications sources Embarquées

机译:用于嵌入式源应用的压电薄膜中的新型高频体积波谐振器

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摘要

This work consist in development of high stability and spectral purity oscillators for the X-band applications which imposes to have high resonators with high quality factor hardly compatible with the feed back electronics developed by the partners of the NOVAE project. Our approach consist in privileging the realization of overtone resonators so called HBAR (High-overtone Bulk Acoustic Resonator) allying the interest of the piezoelectric thin film layers for the excitement of high frequency and the acoustic waves propagation in the high quality crystalline materials. HBAR Resonator based on LiNbO3/LiNbO3 but also LiNbO3/Sapphir was integrated in Colpitts oscillator, and their phase noise then compared with that of the oscillators stabilized by surface acoustic waves resonators of the market. Thus we show that the very strong quality factor measured for the niobate-on-niobate solution allow to reach noise levels comparable or better than those obtained with surface acoustic waves resonators. The manuscript shows the interest of high overtone bulk acoustic waves resonators (HBAR) in terms of ease of implementation and quality of the resonances obtained for high order tones. Also we were able to show that it was reasonably simple to reach the 1,5 GHz band with high quality factors (superior to 10000) for couplings however not over some per thousand.
机译:这项工作包括开发用于X波段应用的高稳定性和频谱纯度振荡器,这意味着具有高品质因数的高谐振器几乎与NOVAE项目合作伙伴开发的反馈电子设备不兼容。我们的方法包括特权化泛音谐振器的实现,即所谓的HBAR(高泛音体声谐振器),它结合了压电薄膜层对高频振动和声波在高质量晶体材料中的传播的兴趣。将基于LiNbO3 / LiNbO3以及LiNbO3 / Sapphir的HBAR谐振器集成到Colpitts振荡器中,然后将其相位噪声与通过市场上的表面声波谐振器稳定的振荡器进行比较。因此,我们表明,针对铌酸盐上铌酸盐溶液测得的非常强的品质因数可以达到与表面声波谐振器相比可比或更高的噪声水平。该手稿显示了高泛音体声波谐振器(HBAR)在易于实现和针对高阶音调获得的谐振质量方面的兴趣。我们还能够证明,以高品质因数(优于10000)耦合达到1,5 GHz频段相当简单,但不超过千分之一。

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    Gachon Dorian;

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  • 年度 2008
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  • 原文格式 PDF
  • 正文语种 fr
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