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Antiferroelectric ADP doping in ferroelectric TGS crystals

机译:铁电TGS晶体中的反铁电ADP掺杂

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摘要

Crystal growth, morphology, hysteresis and dielectric measurements on 20 mol% ammonium dihydrogen phosphate (ADP)doped triglycine sulphate (TGS) crystals are reported. Crystals grew with morphology similar to phosphoric acid-doped TGS (TGSP). Inhomogeneous incorporation of dopants gives rise to a distribution in coercive fields in the different growth sectors. The incorporated dopant hinders polarization switching, which results in the increase in coercive field. No internal bias field is created by the dopant and the phase transition observed is similar to pure TGSP. The Curie point shifts to a lower temperature with increasing dopant concentration in the growth sectors. Significant changes in the activation energies of annealed specimen were identified.
机译:报道了在掺杂有20 mol%磷酸二氢铵(ADP)的三甘氨酸硫酸盐(TGS)晶体上的晶体生长,形态,磁滞和介电常数的测量结果。晶体生长的形态类似于掺杂磷酸的TGS(TGSP)。掺杂剂的不均匀掺入导致在不同生长部门的强制场中的分布。掺入的掺杂剂阻碍极化切换,这导致矫顽场的增加。掺杂剂不会产生内部偏置场,并且观察到的相变类似于纯TGSP。随着生长区中掺杂剂浓度的增加,居里点移至较低的温度。确定了退火样品的活化能的显着变化。

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