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Exciton-polaritons in 2D dichalcogenide layers placed in a planar microcavity: tuneable interaction between two Bose-Einstein condensates

机译:放置在平面微腔中的2D二硫化氢层中的激子极化子:两个Bose-Einstein缩合物之间的可调相互作用

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摘要

Exciton-polariton modes arising from interaction between bound excitons in monolayer thin semiconductorsheets and photons in a Fabry-Perot microcavity are considered theoretically.We calculate the dispersion curves, mode lifetimes, Rabi splitting, and Hopfield coefficients of these structures for two nearly 2D semiconductor materials, MoS2 and WS2, and suggest that they are interesting for studying the rich physics associated with the Bose-Einstein condensation of exciton polaritons. The large exciton binding energy and dipole allowed exciton transitions, in addition to the relatively easily controllable distance between the semiconductor sheets, are the advantages of this system in comparison with traditional GaAs or CdTe based semiconductor microcavities. In particular, in order to mimic the rich physical properties of the quantum degenerate mixture of two bosonic species of dilute atomic gases with tunable interspecies interaction, we put forward a structure containing two semiconductor sheets separated by some atomic-scale distance (l) using a nearly 2D dielectric (e.g., h-BN), which offers the possibility of tuning the interaction between two exciton-polariton Bose-Enstein condensates. We show that thedynamics of this structure are ruled by two coupled Gross-Pitaevskii equations with the coupling parameter∼ l−1.
机译:理论上考虑了单层薄半导体片中的结合激子与Fabry-Perot微腔中的光子相互作用产生的激子-极化子模式,我们计算了两种近2D半导体材料的结构的色散曲线,模式寿命,Rabi分裂和Hopfield系数,MoS2和WS2,并表明它们对于研究与激子极化子的玻色-爱因斯坦凝聚相关的丰富物理学很有趣。与传统的基于GaAs或CdTe的半导体微腔相比,大的激子结合能和偶极允许的激子跃迁,以及相对容易控制的半导体片之间的距离,是该系统的优势。特别是,为了模拟具有可调节的种间相互作用的两种稀有原子气体的玻色子物种的量子简并混合物的丰富物理性质,我们提出了一种结构,该结构包含使用间距为1的原子级距离(l)隔开的两个半导体片。近2D电介质(例如h-BN),可以调节两个激子-极化子玻色-恩斯坦凝聚物之间的相互作用。我们表明,该结构的动力学是由两个耦合参数为-1的Gross-Pitaevskii方程控制的。

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