New general formulation and experimental verification of harmonic clipping contours in high frequency power devices

摘要

This paper presents a novel closed form solutionudfor the theoretical calculation of harmonic clipping contoursudwhen an arbitrary number of harmonics is considered. Theudclipping contours can be used to design the loads of a highudfrequency power device in order to avoid drain current clipping,udhence preventing strong non-linear effects. For the first time theudpredicted second harmonic contours are validated thoroughly byudmeans of experimental characterization of GaN HEMT devices.udThe measured contours result in good agreement with the theory.udMoreover, the effect of third harmonic load tuning is alsoudassessed, and verified for the first time. These results prove thatudthe clipping contours can be used as a tool for the systematicuddesign of low distortion power amplifiers.