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DFT-D3 study of H2 and N2 chemisorption over cobalt promoted Ta3N5-(100), (010) and (001) surfaces

机译:DFT-D3研究钴促进的Ta3N5-(100),(010)和(001)表面对H2和N2的化学吸附

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摘要

The reactants for ammonia synthesis have been studied, employing density functional theory (DFT), with respect to their adsorption on tantalum nitride surfaces. The adsorption of nitrogen was found to be mostly molecular and non-activated with side-on, end-on and tilt configurations. At bridging nitrogen sites (Ta–N–Ta) it results in an azide functional group formation with a formation energy of 205 kJ mol−1. H2 was found also to chemisorb molecularly with an adsorption energy in the range −81 to −91 kJ mol−1. At bridging nitrogen sites it adsorbs dissociatively forming >NH groups with an exothermic formation energy of −175 kJ mol−1 per H2. The nitrogen vacancy formation energies were relatively high compared to other metal nitrides found to be 2.89 eV, 2.32 eV and 1.95 eV for plain, surface co-adsorbed cobalt and sub-surface co-adsorbed cobalt Ta3N5-(010). Co-adsorption of cobalt was found to occur mostly at nitrogen rich sites of the surface with an adsorption energy that ranged between −200 to −400 kJ mol−1. The co-adsorption of cobalt was found to enhance the dissociation of molecular hydrogen on the surface of Ta3N5. The studies offer significant new insight with respect to the chemistry of N2 and H2 with tantalum nitride surfaces in the presence of cobalt promoters.
机译:关于氨合成反应物在密度密度理论上的研究,关于它们在氮化钽表面上的吸附。发现氮的吸附大部分是分子性的,并且未通过侧面,末端和倾斜构型进行活化。在桥接氮位点(Ta–N–Ta)时,形成叠氮化物官能团,形成能为205 kJ mol-1。还发现H 2以-81至-91kJ mol-1的范围内的吸附能进行分子化学吸附。在桥接氮位点时,它解离地吸收> NH基团,每H2的放热形成能为-175 kJ mol-1。与其他金属氮化物相比,氮的空位形成能相对较高,对于普通的,表面共吸附的钴和亚表面共吸附的钴Ta3N5-(010),其为2.89 eV,2.32 eV和1.95 eV。发现钴的共吸附主要发生在表面的富氮位置,其吸附能在-200至-400 kJ mol-1之间。发现钴的共吸附可增强Ta3N5表面分子氢的离解。这些研究提供了关于在钴促进剂存在下具有氮化钽表面的N2和H2化学的重要新见解。

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