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Process development for fabrication of silicon semiconductor devices in a low gravity, high vacuum, space environment

机译：在低重力，高真空，太空环境中制造硅半导体器件的工艺开发

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Pfeiffer Nicholas;
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1. A Study of Difference in Reflow Characteristics Between Electroplated and Sputtered Cu in a Dual-Damascene Fabrication Process for Silicon Semiconductor Devices [J] . TAKASHI ONISHI, MASAO MIZUNO, TAKAO FUJIKAWA, Journal of Electronic Materials . 2011,第6期

机译：硅半导体器件双镶嵌制造工艺中电镀铜和溅射铜之间回流特性差异的研究
2. A Study of Difference in Reflow Characteristics Between Electroplated and Sputtered Cu in a Dual-Damascene Fabrication Process for Silicon Semiconductor Devices [J] . Takashi Onishi, Masao Mizuno, Takao Fujikawa, Journal of Electronic Materials . 2011,第6期

机译：硅半导体器件双镶嵌制造工艺中电镀铜和溅射铜之间回流特性差异的研究
3. The Growth of Thin Silicon Oxide and Silicon Nitride Films at Low Temperature (400 ) and High Growth Rates for Semiconductor Device Fabrication by an Advanced Low Electron Temperature Microwave-Excited High-Density Plasma System [J] . Semiconductor Manufacturing, IEEE Transactions on . 2010,第2期

机译：先进的低电子温度微波激发高密度等离子体系统在低温（400）和高生长速率下用于半导体器件制造的氧化硅和氮化硅薄膜的生长
4. Development progress toward the fabrication of vacuum microelectronic devices using conventional semiconductor processing [C] . Zimmerman, S.M., Colavito, . 1990

机译：使用常规半导体工艺制造真空微电子器件的开发进展
5. Epitaxial graphene on silicon carbide: Low-vacuum growth, characterization, and device fabrication. [D] . Sprinkle, Michael W. 2010

机译：碳化硅上的外延石墨烯：低真空生长，表征和器件制造。
6. Fabrication of NanocrystallineSilicon Thin FilmsUtilized for Optoelectronic Devices Prepared by Thermal Vacuum Evaporation [O] . MagdyS. Abo Ghazala, Hosam A. Othman, Lobna M. Sharaf El-Deen, 2020

机译：纳米晶体的制作硅薄膜用于通过热真空蒸发制备的光电器件
7. Process Development for the Fabrication of Semiconductor Devices and Circuits Using Spin-On Dopant [O] . Ryan Richard R. 2016

机译：使用旋涂掺杂剂制造半导体器件和电路的工艺开发
8. Advanced Processing and Characterization Technologies. Fabrication andCharacterization of Semiconductor Optoelectronic Devices and Integrated Circuits Held in Clearwater, Florida on 8-10 May 1991. American Vacuum Society Series 10 [R] . Holloway, P. H. 1992

机译：先进的加工和表征技术。半导体光电器件和集成电路的制造和表征于1991年5月8日至10日在佛罗里达州克利尔沃特举行。美国真空学会系列10

Process development for fabrication of silicon semiconductor devices in a low gravity, high vacuum, space environment

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