Characterization of Cu2O-ZnO Interface for Photosensitive Devices

摘要

This project investigates the photo sensitive characteristics of Cu2O-ZnO interface from painted cuprous oxide on copper. Existing methods of producing Cu2O-ZnO photosensitive layers are complex, costly and require high temperature conditions. The paintable medium developed in our approach was a simple mixture of cuprous chloride, adhered hydrate cuprous oxide, de-ionised water and acetone. The prepared medium was painted on a clean copper sheet. The device was then heated at 75ᵒC for 30 minutes. The ZnO layer was electroplated in zinc nitrate solution at 72ᵒC. The surfaces of Cu2O and ZnO were analyzed by SEM and the results showed homogenous surface morphology. The photosensitivity of the manufactured Cu2O-ZnO was also characterized using a semiconductor parameter analyser (SPA) and a light source. The manufactured devices exhibited ohmic (I-V) characteristics in the dark. Upon illumination, the current density increased by 40 %. Samples that were annealed for two-hours at 75°C before ZnO electrodeposition, exhibited a solar-cell type (I-V) response.