Accommodation of the misfit strain energy in the BaO(100)/MgO(100) heteroepitaxial ceramic interface using computer simulation techniques

摘要

Static atomistic simulation techniques have been employed to investigate the accommodation of the misfit strain energy in the BaO(100)/MgO(100) interface. The materials return to their natural (bulk) lattice parameters a few planes from the interface, while maintaining expanded or contracted lattice parameters at the interface to ensure charge matching of counter ions. BaO also forms three-dimensional islands when grown on MgO(100), in accordance with molecular beam epitaxy results. This behaviour is attributed to the instability of a monatomic BaO layer on MgO compared with a BaO bilayer.