Rotated Half-Mode Substrate Integrated Waveguide and other Planar Integrated Structures

摘要

High data rate communication channels are becoming more and more integrated into our increasingly technological society. Substrate Integrated Waveguides (SIW) are one planar solution available to the microwave engineer, offering a low-loss and low dispersion means of propagating these high speed, high bandwidth signals.ududIn this thesis, a brief synopsis of SIW structures and components is presented covering the basic waveguide propagating modes and cut-off frequencies. The main analysis techniques associated with SIWs including full wave electromagnetic modelling methods are overviewed, and the associated loss mechanisms of conduction, dielectric and radiation defined, leading to the design rules and guidelines on how best to mitigate them. ududSIW antennas as both leaky-wave and radiating slots are discussed and an example of a single and dual resonating slot antenna design is presented, along with a detailed review of a novel switch beam antenna developed for use within the current WiFi bands. ududThe Slot SIW (or SSIW), which has a small longitudinal gap in one of the main conducting surfaces, allows easy integration of lumped elements or active devices, enabling the waveguide to be loaded with impedances or to be shorted. When the slot is shorted, the waveguide reverts back to the full SIW mode, and when partially loaded an intermediate state results. This is discussed, and the SSIW analysed with the transverse resonance technique, leading to the development of a travelling wave attenuator with the SSIW being periodically loaded with pin diodes. The application of the pin diodes required the use of a capacitive overlay, a development of flexi circuit design to allow capacitive coupling of impedances to connect to the waveguide. The overlay concept is extended further, to form novel passive bandpass filters, with the introduction of virtual vias. ududA limitation of the SSIW is that the majority of the field resides within the dielectric; this allows only a limited interaction with the field at the slot. The rotated Half Mode SIW (rHMSIW), a new variant of the SIW family, places the maximum of the electric field directly on the top dielectric surface, allowing for direct interaction. The waveguide width a is now defined by the dielectric thickness, allowing for the waveguide height b to be adjustable, in normal SIWs this is the other way round; the dielectric thickness fixing the waveguide height and the waveguide width being adjustable. The rHMSIW is characterised with regard to the height and width ratios b/a and the dielectric exposed width (which is adjustable). These parameters effect the modal cut-off frequency, this is investigated and a new equation describing the fundamental mode cut-off frequency is empirically derived. Finally a test coupon which spans the Ku band is designed and measured, which required the development of a novel waveguide transition.