首页> 外文OA文献 >The competition between magnetocrystalline and shape anisotropy on the magnetic and magneto-transport properties of crystallographically aligned CuCr2Se4 thin films
【2h】

The competition between magnetocrystalline and shape anisotropy on the magnetic and magneto-transport properties of crystallographically aligned CuCr2Se4 thin films

机译:晶体取向CuCr2Se4薄膜的磁和磁输运性质对磁晶和形状各向异性的竞争

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

Crystallographically aligned nanocrystalline films of the ferromagnetic spinel CuCr2Se4 were successfully synthesized and their structure and alignment were confirmed by X-ray diffraction and high-resolution transmission electron microscopy. The average size of the crystallites is about 200–250 nm, and their (1 1 1) crystal planes are parallel to the film plane. A good match of the film’s electronic structure to that of bulk CuCr2Se4 is confirmed by transverse Kerr effect measurements. Four easy 〈1 1 1〉 axes are present in the films. One of these axes is oriented perpendicular and three others are oriented at an angle of 19.5° relative to the film plane. The magnetic properties of the films are determined by a competition between the out-of-plane magnetocrystalline anisotropy and the in-plane shape anisotropy. Magnetic measurements show that the dominating type of anisotropy switches from shape to magnetocrystalline anisotropy near 160 K, which leads to a switch of the effective easy axis from inside the film plane at room temperature to perpendicular to the film plane as the temperature decreases. At last, a moderately large, negative value of the low-temperature magnetoresistance was observed for the first time in CuCr2Se4 films.
机译:成功地合成了铁磁尖晶石CuCr2Se4的晶体取向纳米晶薄膜,并通过X射线衍射和高分辨率透射电子显微镜确认了其结构和取向。微晶的平均尺寸约为200–250 nm,它们的(1 1 1)晶面平行于薄膜平面。横向克尔效应测量证实了该膜的电子结构与块状CuCr2Se4的良好匹配。影片中出现了四个简单的<1 1 1>轴。这些轴之一相对于胶片平面垂直,其他三个轴相对于胶片平面的角度为19.5°。膜的磁性能由面外磁晶各向异性和面内形状各向异性之间的竞争来确定。磁测量表明,各向异性的主要类型在160 K附近从形状转换为磁晶各向异性,这导致有效易轴从室温下的薄膜平面内部转换为垂直于薄膜平面的温度降低。最后,在CuCr2Se4薄膜中首次观察到适度的低温磁阻负值。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号