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Carbon enriched thermal sprayed hard metal coatings used in PCD sintering

机译:用于PCD烧结的富碳热喷涂硬质金属涂层

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摘要

During the sintering of fine grain (0.5μm) polycrystalline diamond (PCD) composite materials under high pressure-high temperature (HPHT) conditions, abnormal grain growth (AGG) of the diamond is observed at the diamond/substrate interface. These abnormally grown diamond particles can be several hundreds of microns in diameter and are major flaws in the material that can cause premature fail during application. Understanding of the mechanisms of grain growth in fine grained PCD can bring about ways to eliminate this defect.udThis project aimed to investigate the reduction of AGG diamond in 0.5μm diamond by changing the solubility of the infiltrating molten Co liquid used in PCD sintering. By increasing the carbon saturation level of the infiltrating Co melt, the chance for Ostwald ripening conditions of the diamond during sintering is reduced and AGG is eliminated.udModification of the carbon saturation within the Co melt can be achieved by carbon enriching the WC-Co substrate. Carbon enrichment can be achieved by carbon enriching a WC-Co powder and then HVOF thermal spraying it onto a WC-Co substrate. Results showed that carbon enrichment of coatings (2-6wt%C) was possible using a phenolic resin precursor followed by pyrolysis. Higher carbon contents added presented HVOF spraying problems; high free carbon burn off and lowered melting points which can lead to poor spraying and lower deposition rates.udCarbon enrichment of WC-Co powders was also thought to potentially reduce undesirable eta phase generation during thermal spraying and thus result in an improvement in the wear resistance of the coatings on metal substrates (mild steel). These tests were performed and showed that eta phase generation can to be suppressed during thermal spraying of the carbon enriched powders. Wear resistance and hardness effects on the carbon enriched coatings before and after annealing heat treatment were also analysed and good results were obtained but contradictory is some cases when compared to other authors. Overall, 2wt%C samples showed the most improved properties in terms of WC and eta phase suppression and improved wear resistance, although at the expense of hardness.udAnother method of carbon enrichment was by using a graphite/diamond enhanced carbide (GDEC) interlayer. Both methods were analysed in this project. Carbon coatings were determined not to be very effective in eliminating AGG of fine grain diamond due to limited retained carbon in the coatings to sufficiently saturate the infiltrating melt. GDEC substrates on the other hand show a better possibility, a full 10vol.% GDEC was proved to suppress AGG formation at the diamond/substrate interface of 0.5μm diamond PCD.udAlternatively, the reduction of AGG in fine grain diamond can also be eliminated by changing the interfacial energy of the diamond during sintering; this could be achieved by addition of a grain growth inhibitor. This project investigated the potential of a strong carbide former such as VC as a grain growth inhibitor in fine grain diamond. Addition of 2wt%VC proved to be sufficient to modify the interfacial energy to suppress AGG grain growth of fine (0.5μm) diamond.udA model was developed comparing the grain growth mechanisms within a conventional carbide substrate and a carbon enriched substrate (coating or GDEC). Both grain growth of the diamond and formation of Co pool formation were discussed.
机译:在高压-高温(HPHT)条件下烧结细晶粒(0.5μm)多晶金刚石(PCD)复合材料期间,在金刚石/基底界面处观察到金刚石的异常晶粒生长(AGG)。这些异常生长的金刚石颗粒的直径可能为几百微米,是材料中的主要缺陷,可在使用过程中导致过早失效。了解微晶PCD中晶粒长大的机理可以为消除这种缺陷提供途径。 ud该项目旨在通过改变PCD烧结中所用的渗透性熔融Co液体的溶解度来研究0.5μm金刚石中AGG金刚石的还原。通过增加渗入的Co熔体的碳饱和度,可以降低金刚石在烧结过程中Ostwald熟化条件的机会,并消除AGG。 ud通过碳富集WC-Co可以实现Co熔体中碳饱和度的改变。基质。碳富集可以通过碳富集WC-Co粉末,然后进行HVOF热喷涂到WC-Co基材上来实现。结果表明,使用酚醛树脂前体随后进行热解,可以富集涂层的碳(2-6wt%C)。较高的碳含量增加了HVOF喷涂问题;高游离碳燃烧掉并降低熔点,这可能导致喷涂效果差和沉积速率降低。 ud WC-Co粉的碳富集也被认为可以潜在地减少热喷涂过程中不良的η相生成,从而改善磨损金属基材(低碳钢)上涂层的电阻。进行了这些测试,结果表明,在富碳粉末的热喷涂过程中,可以抑制eta相的产生。还分析了退火热处理前后富碳涂层的耐磨性和硬度影响,并获得了良好的结果,但与其他作者相比却有些矛盾。总体而言,2wt%C的样品在WC和eta相抑制方面表现出最改善的性能,并改善了耐磨性,尽管以牺牲硬度为代价。 ud另一种富碳方法是使用石墨/金刚石增强碳化物(GDEC)中间层。在此项目中分析了这两种方法。由于有限的保留在涂层中的碳足以充分浸渗熔体,所以确定碳涂层在消除细晶粒金刚石的AGG方面不是非常有效。另一方面,GDEC衬底显示出更好的可能性,事实证明,完整的10vol。%GDEC可以抑制在0.5μm金刚石PCD的金刚石/衬底界面处形成AGG。 ud另外,也可以消除细晶粒金刚石中AGG的减少通过在烧结过程中改变金刚石的界面能;这可以通过添加晶粒生长抑制剂来实现。该项目研究了强碳化物形成剂(例如VC)作为细晶粒金刚石中晶粒长大抑制剂的潜力。事实证明,添加2wt%VC足以改变界面能,从而抑制AGG晶粒细化(0.5μm)。 udA模型被开发,用于比较常规碳化物基体和富碳基体(涂层或碳)中的晶粒生长机理。 GDEC)。讨论了金刚石的晶粒长大和钴池形成的过程。

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    McKie Amanda Lynne;

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  • 年度 2013
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