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Direct transcription of two-dimensional colloidal crystalarrays into three-dimensional photonic crystals.

机译:将二维胶体晶体阵列直接转录为三维光子晶体。

摘要

A simple protocol for the fabrication of three-dimensional (3D) photonic crystals in silicon is presented. Surface structuring by nanosphere lithography is merged with a novel silicon etching method to fabricate ordered 3D architectures. The SPRIE method, sequential passivation reactive ion etching, is a one-step processing protocol relying on sequential passivation and reactive ion etching reactions using C 4 F 8 and SF 6 plasma chemistries. The diffusion of fresh reactants and etch product species inside the etched channels is found to play an important role affecting the structural uniformity of the designed structures and the etch rate drift is corrected by adjusting the reaction times. High quality photonic crystals are thus obtained by adding the third dimension to the two-dimensional (2D) colloidal crystal assemblies through SPRIE. Careful adjustments of both mask design and lateral etch extent balance allow the implementation of even more complex functionalities including photonic crystal slabs and precise defect engineering. 3D photonic crystal lattices exhibiting optical stop-bands in the infrared spectral region are demonstrated, proving the potential of SPRIE for fast, simple, and large-scale fabrication of photonic structures.
机译:提出了在硅中制造三维(3D)光子晶体的简单协议。通过纳米球光刻技术进行的表面结构化与一种新颖的硅蚀刻方法相结合,以制造有序的3D架构。 SPRIE方法(顺序钝化反应离子刻蚀)是一种单步处理协议,依赖于使用C 4 F 8和SF 6等离子体化学的顺序钝化和反应离子刻蚀反应。发现新鲜反应物和蚀刻产物种类在蚀刻通道内的扩散在影响设计结构的结构均匀性方面起着重要作用,并且通过调节反应时间来校正蚀刻速率漂移。因此,通过SPRIE将三维添加到二维(2D)胶体晶体组件中,可以获得高质量的光子晶体。仔细调整掩模设计和横向蚀刻程度平衡,可以实现更复杂的功能,包括光子晶体平板和精确的缺陷工程。演示了在红外光谱区域显示光学阻带的3D光子晶体晶格,证明了SPRIE在光子结构的快速,简单和大规模制造中的潜力。

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