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Conductivity and Structure of Sputtered ZnO:Al on Flat and Textured Substrates for Thin-Film Solar Cells

机译:用于薄膜太阳能电池的平面和纹理衬底上溅射的ZnO:Al的电导率和结构

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摘要

Aluminum-doped zinc oxide (ZnO:Al) is a prominent representative of the materialclass denoted as transparent conductive oxides (TCO). TCOs feature electricalconductivity while being transparent in the visible range. These unique propertiesconstitute the wide application of TCOs in opto-electronic devices. This work targetsthe application of TCOs for thin-film silicon and chalcopyrite-based solar cells.Generally, TCOs are deposited onto at substrates. However, TCO growth ontextured, light scattering substrates for thin-film silicon solar cells and on the roughchalcopyrite absorber also call for the optimization of TCO deposition on texturedsubstrates. Therefore, the deposition of sputtered ZnO:Al on at as well as ontextured substrates is elaborated. The focus is the understanding and optimizationof electrical conductivity accompanied by a detailed investigation of the material'sstructural properties.On at substrates, I propose a conductivity model that comprises three scatteringmechanisms, namely ionized-impurity, electron-phonon, and grain boundary scattering.The prominent feature of the model is the analytical description of grainboundary scattering by feld emission, i.e. quantum mechanical tunneling of electronsthrough potential barriers at grain boundaries. For this purpose, a theory of Stratton(R. Stratton, Theory of Field Emission from Semiconductors, Phys. Rev. 125(1962), 67 - 82) is adapted to double Schottky barriers at grain boundaries. Theconductivity model is applied to a wide range of literature data to show its applicabilityand explanatory power.
机译:铝掺杂的氧化锌(ZnO:Al)是表示为透明导电氧化物(TCO)的材料类别的重要代表。 TCO具有导电性,同时在可见光范围内是透明的。这些独特的特性构成了TCO在光电设备中的广泛应用。这项工作的目标是将TCO应用于薄膜硅和基于黄铜矿的太阳能电池。通常,将TCO沉积在基板上。然而,在薄膜硅太阳能电池和粗糙黄铜矿吸收体上的纹理化光散射基材上的TCO生长也要求优化TCO在纹理基材上的沉积。因此,精心设计了溅射的ZnO:Al以及在有纹理的衬底上的沉积。重点是对电导率的理解和优化,并详细研究了材料的结构特性。在基底上,我提出了一种电导率模型,该模型包含三种散射机制,分别是电离杂质,电子声子和晶界散射。该模型的显着特征是对通过长波发射进行的晶界散射的分析描述,即电子通过晶界处的势垒的量子力学隧穿。为此,Stratton(R.Stratton,半导体的场发射理论,Phys.Rev.125(1962),67-82)的理论适用于使晶界处的肖特基势垒加倍。电导率模型被广泛应用于文献数据中,以证明其适用性和解释力。

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    Sommer Nicolas;

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  • 年度 2016
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