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Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells

机译：电阻开关存储单元中纯电子机制的电压-时间困境

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Schroeder, H.; Zhirnov, V.V.; Cavin, R.K.; Waser, R.;
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1. Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells [J] . Herbert Schroeder, Victor V. Zhirnov, Ralph K. Cavin, Journal of Applied Physics . 2010,第5期

机译：电阻开关存储单元中纯电子机制的电压-时间困境
2. Electrode Kinetics Of Cu-sio_2-based Resistive Switching Cells: Overcoming The Voltage-time Dilemma Of Electrochemical Metallization Memories [J] . C. Schindler, G. Staikov, R. Waser Applied Physicsletters . 2009,第7期

机译：Cu-sio_2基电阻开关电池的电极动力学：克服电化学金属化存储器的电压时间难题
3. Bipolar Resistive-Switching Phenomena and Resistive-Switching Mechanisms Observed in Zirconium Nitride-Based Resistive-Switching Memory Cells [J] . Tornil-Sin S., Siminiceanu R.I., Sung Y.M., Device and Materials Reliability, IEEE Transactions on . 2013,第1期

机译：基于氮化锆的电阻切换存储单元中观察到的双极电阻切换现象和电阻切换机制
4. Competitive Mechanisms of Resistive Switching in Nanooxide Based Memory Cells [C] . Dmitriy V. Stremous, Aleksandr L. Danilyuk, Denis A. Podryabinkin, International Conference on Quantum, Nano/Bio, and Micro Technologies . 2015

机译：基于纳米氧化物的内存细胞电阻切换的竞争机制
5. Control over variability in nonvolatile hafnium-oxide resistive-switching memory based on modeling of the switching processes [D] . Butcher, Brian Jerad. 2013

机译：基于开关过程的建模控制非易失性铪 - 氧化物电阻开关存储器的变异性
6. Resistive Random Access Memory (RRAM): an Overview of Materials Switching Mechanism Performance Multilevel Cell (mlc) Storage Modeling and Applications [O] . Furqan Zahoor, Tun Zainal Azni Zulkifli, Farooq Ahmad Khanday 2020

机译：电阻性随机存取存储器（RRAM）：材料交换机制性能多层单元（mlc）存储建模和应用概述
7. Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells [O] . Schroeder, Herbert, Zhirnov, Victor V., Cavin, Ralph K., 2010

机译：电阻开关存储单元中纯电子机制的电压-时间困境

Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells

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