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Short-time piezoelectric measurements in ferroelectric thin films using a double-beam laser interferometer

机译:使用双光束激光干涉仪在铁电薄膜中进行短时压电测量

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摘要

An evolution of the double-beam laser interferometer used for piezoelectric measurements in ferroelectric thin films is reported. Measuring the d(33) hysteresis of a ferroelectric material using lock-in technique with large time constants requires a varying bias field to be applied to the sample over a long period of time. This long-term application leads to electrical stress during the measurement. We present a measurement technique using a different source for the applied field and a varied method for averaging the interferometric response. The measurement time for a complete d(33) hysteresis will be shortened down to several seconds. Also, the cycle frequency becomes comparable to electrical hysteresis measurements. Experimental results on quartz and Pb(Zr-(X),Ti(1-X))O-3 are given to demonstrate the capabilities of the interferometer and the new measurement method. (C) 2003 American Institute of Physics.
机译:报道了用于铁电薄膜中压电测量的双光束激光干涉仪的发展。使用具有大时间常数的锁定技术来测量铁电材料的d(33)磁滞,需要在很长一段时间内将变化的偏置场施加到样品上。长期使用会导致测量过程中产生电应力。我们提出了一种测量技术,该方法使用不同的源来测量应用领域,并使用多种方法来平均干涉测量响应。完整的d(33)磁滞的测量时间将缩短到几秒钟。而且,循环频率变得可以与电滞后测量结果相媲美。给出了在石英和Pb(Zr-(X),Ti(1-X))O-3上的实验结果,以证明干涉仪的功能和新的测量方法。 (C)2003美国物理研究所。

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