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Coherency strain and its effect on ionic conductivity and diffusion in solid electrolytes - An improved model for nanocrystalline thin films and review of experimental data

机译:相干应变及其对固体电解质中离子电导率和扩散的影响-纳米晶薄膜的改进模型和实验数据综述

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摘要

A phenomenological and analytical model for the influence of strain effects on atomic transport in columnar thin films is presented. A model system consisting of two types of crystalline thin films with coherent interfaces is assumed. Biaxial mechanical strain ε0 is caused by lattice misfit of the two phases. The conjoined films consist of columnar crystallites with a small diameter l. Strain relaxation by local elastic deformation, parallel to the hetero-interface, is possible along the columnar grain boundaries. The spatial extent δ0 of the strained hetero-interface regions can be calculated, assuming an exponential decay of the deformation-forces. The effect of the strain field on the local ionic transport in a thin film is then calculated by using the thermodynamic relation between (isostatic) pressure and free activation enthalpy ΔG#. An expression describing the total ionic transport relative to bulk transport of a thin film or a multilayer as a function of the layer thickness is obtained as an integral average over strained and unstrained regions. The expression depends only on known material constants such as Young modulus Y, Poisson ratio ν and activation volume ΔV#, which can be combined as dimensionless parameters. The model is successfully used to describe own experimental data from conductivity and diffusion studies. In the second part of the paper a comprehensive literature overview of experimental studies on (fast) ion transport in thin films and multilayers along solid–solid hetero-interfaces is presented. By comparing and reviewing the data the observed interface effects can be classified into three groups: (i) transport along interfaces between extrinsic ionic conductors (and insulator), (ii) transport along an open surface of an extrinsic ionic conductor and (iii) transport along interfaces between intrinsic ionic conductors. The observed effects in these groups differ by about five orders of magnitude in a very consistent way. The modified interface transport in group (i) is most probably caused by strain effects, misfit dislocations or disordered transition regions.
机译:建立了应变效应对柱状薄膜原子迁移的影响的现象学和分析模型。假设模型系统由具有相干界面的两种类型的晶体薄膜组成。双相机械应变ε0是由两相的晶格失配引起的。相连的薄膜由直径为l的柱状微晶组成。沿着圆柱状晶界,平行于异质界面的局部弹性变形可能会导致应变松弛。假设变形力呈指数衰减,可以计算出应变异质界面区域的空间范围δ0。然后,通过使用(等静压)压力和自由活化焓ΔG#之间的热力学关系,计算应变场对薄膜中局部离子迁移的影响。获得了一个表达式,该表达式将总离子迁移率相对于薄膜或多层体的整体迁移率作为层厚度的函数,作为在应变和非应变区域上的积分平均值。该表达式仅取决于已知的材料常数,例如杨氏模量Y,泊松比ν和活化体积ΔV#,它们可以组合为无量纲参数。该模型已成功用于描述来自电导率和扩散研究的实验数据。在本文的第二部分中,提供了关于沿着固体-固体异质界面在薄膜和多层膜中(快速)离子传输的实验研究的综合文献综述。通过比较和审查数据,观察到的界面效应可分为三类:(i)沿非本征离子导体(和绝缘体)之间的界面传输;(ii)沿非本征离子导体的开放表面传输;(iii)传输沿着本征离子导体之间的界面。这些组中观察到的效果以非常一致的方式相差大约五个数量级。 (i)组中界面迁移的改变很可能是由应变效应,错配位错或无序过渡区引起的。

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