Hot electron transport in AlGaN/GaN two-dimensional conducting channels

摘要

We report on experimental studies of high-field electron transport in AlGaN/GaN two-dimensional electron gas. The velocity-electric field characteristics are extracted from 10 to 30 ns pulsed current-voltage measurements for 4.2 and 300 K. An electron drift velocity as high as 1.7x10(7) cm/s was obtained in the fields 150 kV/cm. Estimates of thermal budget of the system show that overheating of the electrons exceeds 1700 K at highest electric fields achieved in the experiment. (C) 2004 American Institute of Physics.