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Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors

机译：基于AlGaN / GaN的高电子迁移率晶体管中的过多低频噪声

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Vitusevich S.; Danylyuk S. V.; Eastman L. F.; Klein N.; Petrychuk C. C.; Sokolov V. N.; Kochelap V. A.; Belyaev A. E.; Tilak V.; Smart J.; Vertiatchikh A.;
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1. Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors [J] . Andrade Maria Gloria Cano de, Bergamim Luis Felipe de Oliveira, Baptista Junior Braz, Solid-State Electronics . 2021,第Sepa期

机译：AlGaN / GaN高电子移动晶体管的低频噪声研究
2. Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation [J] . K. Takakura, V. Putcha, E. Simoen, Electron Devices, IEEE Transactions on . 2020,第8期

机译：具有不同栅极长度和方向的GaN / AlGaN金属氧化物半导体高电子移动性场效应晶体管的低频噪声研究
3. AlGaN/GaN-Based Laterally Gated High-Electron-Mobility Transistors With Optimized Linearity [J] . Odabasi Oguz, Yilmaz Doan, Aras Erdem, IEEE Transactions on Electron Devices . 2021,第3期

机译：基于AlGaN / GaN的横向门控高电子迁移率，具有优化的线性
4. Relationship between Al content of AlGaN buffer layer on top of initial AlN nucleation layer on Si and vertical leakage current of AlGaN/GaN high-electron-mobility transistor structures [C] . Yuya Yamaoka, Kazuhiro Ito, Akinori Ubukata, International Conference on Indium Phosphide & Related Materials;International Symposium on Compound Semiconductors;Compound Semiconductor Week . 2016

机译：Si上初始AlN成核层顶部的AlGaN缓冲层的Al含量与AlGaN / GaN高电子迁移率晶体管结构的垂直泄漏电流之间的关系
5. Thermal Stability of Plasma-enhanced chemical vapor deposition Silicon Nitride Passivation on AlGaN/GaN High-electron-mobility transistors. [D] . Ha, Minh-Trang Teresa. 2016

机译：在AlGaN / GaN高电子迁移率晶体管上进行等离子增强化学气相沉积的氮化硅钝化的热稳定性。
6. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors [O] . Huan-Yu Shih, Fu-Chuan Chu, Atanu Das, 2016

机译：AlGaN / GaN金属-氧化物-半导体高电子迁移率晶体管中作为栅极电介质的氧化镓膜的原子层沉积
7. Femtosecond intersubband dynamics of electrons in AlGaN/GaN-based high-electron-mobility transistors [O] . Wang, Z., Reimann, K., Woerner, M., 2008

机译：飞秒的飞秒亚带动力学的基于AlGaN / GaN的高电子迁移率晶体管

Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors

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