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Role of Spin-Orbit Coupling and Hybridization Effects in the Electronic Structure of Ultrathin Bi Films

机译:自旋轨道耦合和杂交效应在超薄Bi薄膜电子结构中的作用

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摘要

The electronic structure of Bi(001) ultrathin films (thickness >= 7 bilayers) on Si(111)-7x7 was studied by angle-resolved photoemission spectroscopy and first-principles calculations. In contrast with the semimetallic nature of bulk Bi, both the experiment and theory demonstrate the metallic character of the films with the Fermi surface formed by spin-orbit-split surface states (SSs) showing little thickness dependence. Below the Fermi level, we clearly detected quantum well states (QWSs) at the M ($) over bar point, which were surprisingly found to be non-spin-orbit split; the films are "electronically symmetric" despite the obvious structural nonequivalence of the top and bottom interfaces. We found that the SSs hybridize with the QWSs near M ($) over bar and lose their spin-orbit-split character.
机译:通过角分辨光发射光谱法和第一性原理研究了Bi(001)超薄膜(厚度> = 7双层)在Si(111)-7x7上的电子结构。与块状Bi的半金属性质相反,实验和理论都证明了具有自旋轨道分裂表面态(SSs)形成的费米表面的薄膜的金属特性,其对厚度的依赖性很小。在费米能级以下,我们清楚地检测到了条点上M($)处的量子阱状态(QWS),令人惊讶地发现它们是非自旋轨道分裂的。尽管顶部和底部界面的结构明显不相等,但这些薄膜仍是“电子对称的”。我们发现,SS与接近M($)的QWS杂交,并失去了自旋轨道分裂特性。

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