Optical and structural properties of ß-FeSi2 precipitate layers in silicon

摘要

Semiconducting iron disilicide (beta-FeSi2) precipitates in silicon were fabricated by ion beam synthesis. The samples were characterized by Raman spectroscopy, transmission electron microscopy, and photoluminescence spectroscopy. By comparison with a beta-FeSi2 single crystal, the silicide precipitates are found to be unstrained in all cases, so there is no correlation between strain and photoluminescence efficiency. Our results indicate that carrier recombination at silicon dislocations is sufficient to explain the photoluminescence in our samples. (C) 2003 American Institute of Physics.