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Ferroelectric BaTiO3 thin-film optical waveguide modulators

机译:铁电体BaTiO3薄膜光波导调制器

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摘要

High-quality BaTiO3 epitaxial thin films on MgO substrates have been grown by pulsed-laser deposition. Both, c-axis and a-axis BaTiO3 orientations were studied. Mach-Zehnder optical waveguide modulators with a fork angle of 1.7degrees have been fabricated by ion-beam etching. The waveguides are of the ridge type, the BaTiO3 thickness is 1 mum, the ridge step 50 nm, and the width 2 mum. Light was coupled into the waveguides from optical fibers. The BaTiO3 waveguide propagation losses are 2-3 dB/cm. Electrodes of 3 mm length were deposited besides the waveguides. Electro-optic modulation has been demonstrated with V-pi=6.3 V at 632 nm wavelength and V-pi=9.5 V at 1550 nm wavelength for the a-axis samples, and with V-pi=8 V at 632 nm wavelength and V-pi=15 V at 1550 nm for the c-axis samples. Theoretical modelling of the Mach-Zehnder modulators for both crystalline orientations of the BaTiO3 films gave the Pockels coefficients r(51)=80 pm/V for the c-axis film and an effective Pockels coefficient r(eff)=734 pm/V for the a-axis films at 632 nm wavelength. (C) 2002 American Institute of Physics.
机译:通过脉冲激光沉积已经在MgO衬底上生长了高质量的BaTiO3外延薄膜。研究了c轴和a轴BaTiO3的取向。通过离子束蚀刻已经制造了叉角为1.7度的马赫曾德尔光波导调制器。波导是脊型的,BaTiO3的厚度为1微米,脊阶为50 nm,宽度为2微米。光从光纤耦合到波导中。 BaTiO3波导的传播损耗为2-3 dB / cm。除波导外,还沉积了3 mm长的电极。对于a轴样本,已经证明了电光调制在632 nm波长下的V-pi = 6.3 V和在1550 nm波长下的V-pi = 9.5 V,以及在632 nm波长下的V-pi = 8 V和V对于c轴样本,在1550 nm处-pi = 15V。对于BaTiO3膜的两种晶体取向的Mach-Zehnder调制器的理论模型给出了c轴膜的Pockels系数r(51)= 80 pm / V,对于C轴膜的有效Pockels系数r(eff)= 734 pm / V a轴膜在632 nm波长处。 (C)2002美国物理研究所。

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