Large-signal device simulation in time- and frequency-domain: a comparison

摘要

The aim of this paper is to compare the most common time- and frequency-domain numerical techniques for the determination of the steady-state solution in the physics-based simulation of a semiconductor device driven by a time-periodic generator. The shooting and harmonic balance (HB) techniques are applied to the solution of the discretized drift-diffusion device model coupled to the external circuit embedding the semiconductor device, thus providing a fully nonlinear mixed mode simulation. The comparison highlights the strong and weak points of the two approaches, basically showing that the time-domain solution is more robust with respect to the initial condition, while the HB solution provides a more rapid convergence once the initial datum is close enough to the solution itself