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InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

机译:InGaN阶梯式电子注入器,用于减少InGaN发光二极管中的电子溢出

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摘要

Ballistic and quasiballistic electron transport across the active InGaN layer are shown to be responsible for electron overflow and electroluminescence efficiency droop at high current levels in InGaN light emitting diodes both experimentally and by first-order calculations. An InGaN staircase electron injector with step-like increased In composition, an “electron cooler,” is proposed for an enhanced thermalization of the injected hot electrons to reduce the overflow and mitigate the efficiency droop. The experimental data show that the staircase electron injector results in essentially the same electroluminescence performance for the diodes with and without an electron blocking layer, confirming substantial electron thermalization. On the other hand, if no InGaN staircase electron injector is employed, the diodes without the electron blocking layer have shown significantly lower (three to five times) electroluminescence intensity than the diodes with the blocking layer. These results demonstrate a feasible method for the elimination of electron overflow across the active region, and therefore, the efficiency droop in InGaN light emitting diodes.
机译:通过实验和通过一阶计算,显示出在有源InGaN层上的弹道和准弹道电子传输是造成InGaN发光二极管在高电流水平下电子溢出和电致发光效率下降的原因。提出了具有阶梯状增加的In组成的InGaN阶梯电子注入器,即“电子冷却器”,用于增强注入的热电子的热化,以减少溢流并减轻效率下降。实验数据表明,对于有和没有电子阻挡层的二极管,阶梯式电子注入器的电致发光性能基本相同,从而证实了电子的大量热化。另一方面,如果不使用InGaN阶梯式电子注入器,则没有电子阻挡层的二极管的电致发光强度要比具有阻挡层的二极管低(三到五倍)。这些结果证明了一种可行的方法可以消除整个有源区中的电子溢出,从而消除InGaN发光二极管中的效率下降。

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