Correlation of tellurium inclusions and carrier lifetime in detector grade cadmium zinc telluride

摘要

Carrier lifetimes and telluriuminclusion densities in detector grade cadmiumzinc telluride crystals grown by the high pressure Bridgman method were optically measured using pulsed laser microwavecavity perturbation and infrared microscopy. Excess carriers were produced in the material using a pulsed laser with a wavelength of 1064 nm and pulse width of 7 ns, and the electronic decay was measured at room temperature. Spatial mapping of lifetimes and defect densities in cadmiumzinc telluride was performed to determine the relationship between telluriumdefect density and trapping. A strong correlation was found between the volume fraction of telluriuminclusions and the carrier trapping time.