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Room-temperature single-electron charging in electrochemically synthesized semiconductor quantum dot and wire array

机译:电化学合成半导体量子点和线阵列中的室温单电子充电

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摘要

Cylindrical quantum dots of diameter ∼8 nm and height 3–10 nm, and wires of diameter 50 nm and height 500–1000 nm, were self-assembled by electrodepositing semiconductors in the nanometer-sized pores of anodic alumina films. Current–voltage characteristics of both wires and dots show Coulomb blockade at room temperature, while the wires also show a Coulomb staircase when exposed to infrared radiation. These results establish that electrochemicalself-assembly is a viable technique for producing nanostructures that have potential uses in room-temperature single electronics.
机译:通过在阳极氧化铝膜的纳米级孔中电沉积半导体,可以自组装直径约8 nm,高度3–10 nm的圆柱量子点和直径50 nm,高度500–1000 nm的导线。导线和点的电流-电压特性在室温下均显示库仑阻塞,而导线在暴露于红外辐射时也显示出库仑阶梯。这些结果表明,电化学自组装是一种可行的技术,可用于生产在室温下单个电子产品中具有潜在用途的纳米结构。

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