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Effect of large strain on dielectric and ferroelectric properties of Ba0.5Sr0.5TiO3 thin films

机译:大应变对Ba0.5Sr0.5TiO3薄膜介电和铁电性能的影响

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摘要

BaxSr1−xTiO3 is ideally suited as a tunable medium for radio frequency passive component. In this context we have studied the effect of biaxial strain on the dielectric and ferroelectricproperties of Ba0.5Sr0.5TiO3thin filmsgrown epitaxially on SrTiO3 (001) substrates. The lattice parameters of the films determined by high-resolution x-ray diffraction with the thickness varying from 160 to 1000 nm indicated large biaxial compressive strain which decreased from 2.54% to 1.14% with increasing film thickness. Temperature-dependent measurements of the dielectric constant in our strained Ba0.5Sr0.5TiO3thin films revealed a significant increase in the Curie temperature as the film thickness is below 500 nm. Enhanced ferroelectric behavior was observed for highly strained films with a remanent polarization of 15 μC/cm2 in the 160-nm-thick layer. However, the thick films(≥500 nm) exhibited weak temperature dependence of the dielectric constant without any pronounced peak corresponding to the Curie temperature, which may suggest inhomogeneous strain distribution in the thick films.
机译:BaxSr1-xTiO3非常适合用作射频无源组件的可调介质。在此背景下,我们研究了双轴应变对在SrTiO3(001)衬底上外延生长的Ba0.5Sr0.5TiO3薄膜的介电和铁电性能的影响。通过高分辨率x射线衍射确定的膜的晶格参数,厚度在160到1000 nm之间变化,表明较大的双轴压缩应变,随着膜厚度的增加,其双轴压缩应变从2.54%降低到1.14%。我们的应变Ba0.5Sr0.5TiO3薄膜的介电常数随温度变化的测量结果表明,当薄膜厚度小于500 nm时,居里温度显着增加。对于高应变薄膜,在160nm厚的层中剩余极化强度为15μC/ cm2,观察到铁电性能增强。然而,厚膜(≥500nm)对介电常数的温度依赖性较弱,而没有与居里温度相对应的明显峰值,这可能表明厚膜中的应变分布不均匀。

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