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Large pyroelectric effect in undoped epitaxial Pb(Zr,Ti)O3 thin films on SrTiO3 substrates

机译:SrTiO3衬底上未掺杂外延Pb(Zr,Ti)O3薄膜的大热释电效应

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摘要

We have studied pyroelectric and ferroelectric properties of Pb(Zr,Ti)O3thin filmsgrown epitaxially on SrTiO3(001) substrates by rf magnetron sputtering. The pyroelectric coefficient was measured in the temperature range from 280 to 370 K using the Byer–Roundy method. Values as high as 48 nC/cm2 K have been obtained at 300 K. The PZTthin films exhibited a remanent polarization of 45–58 μC/cm2. The improved pyroelectric coefficient was attributed to a high crystalline quality of the films, as revealed by x-ray diffraction that showed only (001)-oriented perovskitePZT phase and a ω-rocking curve full width at half maximum value as low as 4.2 arc min for 300 nm thick films.
机译:我们已经研究了通过射频磁控溅射在SrTiO3(001)衬底上外延生长的Pb(Zr,Ti)O3薄膜的热电和铁电性能。使用Byer-Roundy方法在280至370 K的温度范围内测量了热释电系数。在300 K时已获得高达48 nC / cm2 K的值。PZTthin薄膜的剩余极化率为45-58 C / cm2。热释电系数的提高归因于薄膜的高结晶质量,如X射线衍射所揭示的那样,其仅显示(001)取向的钙钛矿PZT相和ω-摇摆曲线全宽,最大值的一半低至4.2 arc min。用于300 nm厚的薄膜。

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