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Non-equilibrium Green\u27s function (NEGF) simulation of metallic carbon nanotubes including vacancy defects

机译:具有空位缺陷的金属碳纳米管的非平衡格林函数(NEGF)模拟

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摘要

The electronic behavior of metallic carbon nanotubes under the influence of externally applied electric fields is investigated using the Non-Equilibrium Green’s function method self consistently coupled with three-dimensional (3D) electrostatics. A nearest neighbor tight binding model based on a single pz orbital for constructing the device Hamiltonian is used. The 3D Poisson equation is solved using the Finite Element Method. Carbon nanotubes exhibit a very weak metallic behavior, and external electric fields can alter the electrostatic potential of the tubes significantly. A single vacancy defect in the channel of a metallic carbon nanotube can decrease its conductance by a factor of two. More than one vacancy can further decrease the conductance.
机译:使用始终如一地结合三维(3D)静电的非平衡格林函数方法,研究了金属碳纳米管在外部施加电场的影响下的电子行为。使用基于单个pz轨道的最近邻紧密结合模型来构造哈密顿量。使用有限元方法求解3D泊松方程。碳纳米管表现出非常弱的金属性能,并且外部电场会显着改变管的静电势。金属碳纳米管通道中的单个空位缺陷会使其电导降低两倍。一个以上的空缺会进一步降低电导。

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