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Qubit control-pulse circuits in SOS-CMOS technology for a Si:P quantum computer

机译:Si:P量子计算机的SOS-CMOS技术中的Qubit控制脉冲电路

摘要

Microelectronics has shaped the world beyond what was thought possible at the time of its advent. One area of current research in this field is on the solid-state Si:P-based quantum computer (QC). In this machine, each qubit requires an individually addressed fast control-pulse for non-adiabatic drive and measure operations. Additionally, it is increasingly becoming important to be able to interface nanoelectronics with complementary metal-oxide-semiconductor (CMOS) technology. In this work, I have designed and demonstrated full-custom mixed-mode and full-digital fast control-pulse generators fabricated in a silicon-on-sapphire (SOS) CMOS commercial foundry process – a radio-frequency (RF) CMOS technology. These circuits are, fundamentally, fast monostable multivibrators.Initially, after the design specifications were decided upon, I characterized NFET and PFET devices and a n+-diffusion resistor from 500 nm and 250 nm commercial SOS-CMOS processes. Measuring their conductance curves at 300 300 K, 4.2 2 K, and sub-K (30 30 mK base to 1000 1000 mK) showed that they function with desirable behaviour although exhibiting some deviations from their 300 300 K characteristics.The mixed-mode first generation control-pulse generator was demonstrated showing that it produced dwell-time adjustable pulses with 100 100 ps rise-times at 300 K, 4.2 2 K, and sub-K with a power dissipation of 12 12 uW at 100 100 MHz. The full-digital second generation control-pulse generator was demonstrated showing accurately adjustable dwell-times settable via a control-word streamed synchronously to a shift-register. The design was based on a ripple-counter with provisions for internal or external clocking.This research has demonstrated that SOS-CMOS technology is highly feasible for the fabrication of control microelectronics for a Si:P-based QC. I have demonstrated full-custom SOS-CMOS mixed-mode and full-digital control circuits at 300 300 K, 4.2 2 K, and sub-K which suitable for qubit control.
机译:微电子技术已经超越了它诞生之初所能想到的世界。该领域当前的研究领域是基于固态Si:P的量子计算机(QC)。在该机器中,每个量子位都需要单独寻址的快速控制脉冲,以实现非绝热驱动和测量操作。另外,能够将纳米电子技术与互补金属氧化物半导体(CMOS)技术相连接变得越来越重要。在这项工作中,我设计并演示了采用蓝宝石硅(SOS)CMOS商业铸造工艺(射频(RF)CMOS技术)制造的全定制混合模式和全数字快速控制脉冲发生器。这些电路从根本上讲就是快速单稳态多谐振荡器。最初,在确定了设计规格后,我对NFET和PFET器件以及500 nm和250 nm商业SOS-CMOS工艺中的n +扩散电阻进行了表征。在300 300 K,4.2 2 K和sub-K(30 30 mK基底至1000 1000 mK)下测量其电导曲线表明,尽管它们的300 300 K特性存在一些偏差,但它们仍具有理想的性能。演示了发电控制脉冲发生器,表明它产生的驻留时间可调脉冲在300 K,4.2 2 K和sub-K时的上升时间为100 100 ps,在100 100 MHz时的功耗为12 12 uW。演示了全数字的第二代控制脉冲发生器,该发生器显示了通过同步流至移位寄存器的控制字可设置的精确可调的停留时间。该设计基于具有内部或外部时钟规定的纹波计数器。这项研究表明,SOS-CMOS技术对于制造基于Si:P的QC的控制微电子器件是高度可行的。我已经演示了300 300 K,4.2 2 K和sub-K的全定制SOS-CMOS混合模式和全数字控制电路,适用于qubit控制。

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