首页> 外文OA文献 >Eutectic Sn-Bi Alloy for Interconnection of Silicon Solar Cells
【2h】

Eutectic Sn-Bi Alloy for Interconnection of Silicon Solar Cells

机译:用于硅太阳能电池互连的共晶Sn-Bi合金

摘要

The shear stress induced by soldering for the interconnection of silicon solar cells can lead to increased micro cracks and decrease manufacturing yields for thinner cells. Concerns remain in transitioning to copper (Cu) metallisation to reduce silver consumption regarding the reliability of using soldered interconnection to Cu-plated cells. This thesis investigates the electrochemical deposition of eutectic tin (Sn) - bismuth (Bi) alloy and describes three applications of the plated alloy for the interconnection of silicon solar cells.In the first application, it is shown that by controlling the plating current density, eutectic Sn-Bi alloy can be deposited from an electrolyte containing both Sn and Bi ions on Cu interconnection tabs as a substitute for Sn-lead solder. Reflowing the alloy after plating can improve the bonding strength with an average force of 1.26 N/mm being measured in a pull test of two bonded Cu tabs where the plated Sn-Bi was reflowed on a hotplate at 200 C and then bonded at 180 C with quenching in ethylene glycol for fast cooling. The second application involves the deposition of eutectic Sn-Bi alloy on n-type and p-type Cu contacts of laser-doped selective-emitter cells using light-induced and field-induced plating, respectively. The importance of uniformly reflowing the alloy after plating is demonstrated, with cells having plated Sn-Bi alloy and interconnected using Smart Wire Connection Technology (with Sn-silver coated wires) experiencing a power loss of 10% after 140 thermal cycles if the alloy was reflowed before lamination and 51% if the alloy was not reflowed. In the third application, the use of plated Sn-Bi is proposed to provide bonding for a backsheet metallisation scheme in which an inkjet-patterned seed layer was plated with Cu and eutectic Sn-Bi alloy to enable bonding to cells. The tapered height of plated Cu is advantageous in reducing the Cu usage for back contact cells.This thesis demonstrates the future potential of plated Sn-Bi alloy to enable cost-effective interconnection of silicon solar cells in a range of different ways. It also highlights the importance of developing methods to accurately characterise the plated alloy composition and uniformly reflowing the alloy before bonding.
机译:由焊接引起的硅太阳能电池互连所产生的剪切应力会导致微裂纹增加,并降低较薄电池的制造成品率。关于使用焊接互连到镀铜电池的可靠性方面,仍存在过渡到铜(Cu)金属化以减少银消耗的担忧。本文研究了共晶锡(Sn)-铋(Bi)合金的电化学沉积,并描述了电镀合金在硅太阳能电池互连中的三种应用。在第一个应用中,通过控制电镀电流密度可以证明,共晶Sn-Bi合金可以由包含Sn和Bi离子的电解质沉积在Cu互连接线片上,以替代Sn铅焊料。电镀后回流合金可以提高结合强度,在两个结合的铜片的拉力测试中测得的平均力为1.26 N / mm,其中镀锡Sn-Bi在200 aC的温度下在电炉上回流,然后在180°C结合C,在乙二醇中淬灭,可快速冷却。第二个应用涉及分别使用光诱导和场诱导电镀将共晶Sn-Bi合金沉积在激光掺杂的选择性发射极电池的n型和p型Cu触点上。展示了镀层后均匀回流合金的重要性,如果电池为镀锡Sn-Bi合金并使用Smart Wire Connection Technology(带有镀锡银镀银线)互连的电池,经过140次热循环后功率损耗为10%,层压前要回流,如果不回流则为51%。在第三申请中,提出使用镀锡的Sn-Bi来提供用于背板金属化方案的结合,其中在喷墨图案化的种子层上镀有Cu和低共熔的Sn-Bi合金以能够结合到电池。镀铜的锥度高度有利于减少背面接触电池的铜用量。本文证明了镀锡Sn-Bi合金在以多种不同方式实现成本效益的硅太阳能电池互连方面的未来潜力。它还强调了开发方法的重要性,该方法必须能准确表征镀层合金成分并在粘结之前均匀地回流合金。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号