Electrostatically defined few-electron double quantum dot in silicon

摘要

A few-electron double quantum dot was fabricated usingmetal-oxide-semiconductor-compatible technology andlow-temperature transport measurements were performed to study theenergy spectrum of the device. The double dot structure iselectrically tunable, enabling the inter-dot coupling to be adjustedover a wide range, as observed in the charge stability diagram.Resonant single-electron tunneling through ground and excited statesof the double dot was clearly observed in bias spectroscopymeasurements.