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Cryogenic Electronics for Quantum Computer Interface: Low Temperature D/A Converters for Silicon Quantum Computer Controller Circuit

机译:用于量子计算机接口的低温电子产品:用于硅量子计算机控制器电路的低温D / A转换器

摘要

The quest to harness exceptionally high speed computational power exploits the cryogenic Silicon (Si) CMOS technology to find its application in one of the world’s extraordinary research works — ‘Si Quantum Computer’. Silicon solid state quantum bits (qubits) are the fundamental processing elements for these computers. The recent advancements on qubits realization in Si technology indicate that a full-scale (FS) quantum computer will be built in the not-so-distant future. The operating temperature of these qubits are typically ≤ 500mK and they require a cryogenic controller as well as a signal generator circuit which can produce hundreds of different small amplitude fast triggering control signals for their initialisation to start the quantum computation.In this thesis we explore the feasibility of 4.2K (liquid Helium temperature) CMOS data converters to work it as a cryogenic waveform generator to produce the necessary stimuli for the qubits. We choose current steering (CS) D/A converters (DACs) as a potential candidate for this application due to its innate high speed capability of driving resistive loads without the help of any output buffer. However, the lack of a reliable matured cryogenic MOS model makes it difficult to predict the functionality, characteristics and performance of a mismatch constrained CS DAC at 4.2K temperature. Nevertheless, in our first prototype we present a 10 bit partial segmented (4LSB+6MSB) current steering D/A converter in 0.5µm Silicon-on-Sapphire (SOS) CMOS technology which is able to retain its complete monotonic linear behaviour from room to liquid Helium (He) temperature.A low temperature current cell is the building block of a 4.2K CS DAC, and in our second design we develop a unique unit current cell structure to realize a second cryogenic D/A converter. Characterization of the cell through the realization of a 6 bit segmented (4LSB+2MSB) current steering DAC proofs its robustness against the unforeseen extended ‘cryo-effects’ down at liquid He temperature. Both of these converters ability to maintain their full accuracy down at 4.2K temperature opens the door of utilizing the CS DACs as a low temperature signal generator in the future scalable Si quantum computer controller circuit.
机译:利用超高速计算能力的探索是利用低温硅(Si)CMOS技术在世界上一项非凡的研究成果之一“ Si Quantum Computer”中找到其应用。硅固态量子位(qubit)是这些计算机的基本处理元素。 Si技术中量子位实现的最新进展表明,将在不久的将来建造一个全尺寸(FS)量子计算机。这些量子位的工作温度通常≤500mK,它们需要一个低温控制器以及一个信号发生器电路,该电路可以产生数百种不同的小幅度快速触发控制信号以进行初始化,从而开始量子计算。 4.2K(液氦温度)CMOS数据转换器将其用作超低温波形发生器以产生量子位所需刺激的可行性。我们选择电流转向(CS)D / A转换器(DAC)作为此应用的潜在候选者,因为其固有的高速能力可驱动电阻性负载而无需任何输出缓冲器。但是,由于缺乏可靠的成熟低温MOS模型,因此很难预测4.2K温度下失配受限CS DAC的功能,特性和性能。不过,在我们的第一个原型中,我们展示了采用0.5µm蓝宝石硅(SOS)CMOS技术的10位部分分段(4LSB + 6MSB)电流控制D / A转换器,该技术能够保持从房间到房间的完整单调线性行为。液态氦(He)温度。低温电流单元是4.2K CS DAC的组成部分,在我们的第二个设计中,我们开发了独特的单位电流单元结构来实现第二个低温D / A转换器。通过实现6位分段(4LSB + 2MSB)电流控制DAC来表征电池,证明了其在液氦温度下抵抗不可预见的扩展“低温效应”的鲁棒性。这两种转换器都能够在4.2K温度下保持其全部精度,这为在将来可扩展的Si量子计算机控制器电路中将CS DAC用作低温信号发生器打开了大门。

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