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Time-resolved Photoluminescence for the Measurement of the Effective Carrier Lifetime in Si Photonic Structures

机译：时间分辨光致发光用于硅光子结构中有效载流子寿命的测量

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Parola Stéphanie; Harouri Abdelmounaim; Lalouat Loic; Barbos Corina; Orobtchouk Régis; Lemiti Mustapha; Blanc-Pélissier Danièle;
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1. Minority Carrier Lifetime Measurements on 4H-SiC Epiwafers by Time-Resolved Photoluminescence and Microwave Detected Photoconductivity [J] . Jan Beyer, Nadine Schüler, Jürgen Erlekampf, Materials science forum . 2019,第期

机译：通过时间分辨的光致发光和微波检测光电导率在4H-SiC ePIWafers上进行少数型载波寿命测量
2. Time-resolved photoluminescence for self-calibrated injection-dependent minority carrier lifetime measurements in silicon [J] . Parola S., Daanoune M., Kaminski-Cachopo A., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2015,第3期

机译：时间分辨光致发光用于硅中自校准注入相关少数载流子寿命测量
3. Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence [J] . Blair C. Connelly Grace D. Metcalfe Hongen Shen and Michael Wraback Applied Physics Letters . 2010,第25期

机译：使用时间分辨光致发光在长波红外II型超晶格中直接进行少数载流子寿命测量和重组机理
4. Time-resolved photoluminescence for the measurement of the effective carrier lifetime in Si photonic structures [C] . Stephanie Parola, Abdelmounaim Harouri, Loic Lalouat EMRS Meeting on Advanced Inorganic Materials and Structures for Photovoltaics . 2016

机译：用于测量Si光子结构中有效载体寿命的时间分辨的光致发光
5. Microwave Instrumentation and Sensing Techniques for Quantum Efficiency and Minority-Carrier Lifetime Measurements [D] . Lu, Kyle Benjamin. 2017

机译：量子效率和少数载体寿命测量的微波仪表和传感技术
6. A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures [O] . Yuchen Xing, Lai Wang, Di Yang, -1

机译：极性InGaN / GaN多量子阱结构的时间分辨光致发光测量的新模型
7. Mapping Charge Carrier Density in Organic Thin-Film Transistors by Time-Resolved Photoluminescence Lifetime Studies [O] . Leißner Till, Jensen Per Baunegaard With, Liu Yiming, 2017

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8. Using Time-Resolved Photoluminescence to Measure the Excitation and Temperature Dependence of Carrier Relaxation in Mid-Wave Infrared Semiconductors [R] . Cumblidge, K. 2004

机译：利用时间分辨光致发光测量中波红外半导体中载流子弛豫的激发和温度依赖性

Time-resolved Photoluminescence for the Measurement of the Effective Carrier Lifetime in Si Photonic Structures

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