首页> 外文OA文献 >Microsecond Simulations Indicate 3_10 Helix Transition Facilitates Translation of the S4 Segment of Kv1.2 and Suggest a Hydrophobic Gating Barrier

【2h】

Microsecond Simulations Indicate 3_10 Helix Transition Facilitates Translation of the S4 Segment of Kv1.2 and Suggest a Hydrophobic Gating Barrier

机译：微秒模拟表明3_10螺旋过渡有助于Kv1.2的S4片段的翻译，并建议疏水门控障碍

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Lindahl Erik; Schwaiger Christine; Bjelkmar Pär;
展开▼
作者单位

展开▼
年度 2010
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. 3-helix conformation facilitates the transition of a voltage sensor S4 segment toward the down state. [J] . Schwaiger CS, Bjelkmar P, Hess B, Biophysical Journal . 2011,第6期

机译：3螺旋构型有助于电压传感器S4段向下降状态的过渡。
2. Metal Bridge in S4 Segment Supports Helix Transition in Shaker Channel [J] . Bassetto Carlos A. Z. Jr., Carvalho-de-Souza Joao Luis, Bezanilla Francisco Biophysical Journal . 2020,第4期

机译：S4段中的金属桥支持振动筛中的螺旋过渡
3. Coupling of S4 helix translocation and S6 gating analyzed by molecular-dynamics simulations of mutated Kv channels. [J] . Nishizawa M, Nishizawa K Biophysical Journal . 2009,第1期

机译：S4螺旋易位和S6门控的耦合通过突变Kv通道的分子动力学模拟分析。
4. Team Cognition as a Barrier and Facilitator in Care Transitions: Implications for Work System Design [C] . Abigail R. Wooldridge, Pascale Carayon, Peter Hoonakker, Human Factors and Ergonomics Society Annual Meeting . 2019

机译：作为护理过渡的障碍和辅导员的团队认知：对工作系统设计的影响
5. Improving Facilitated Debriefings - How are Barriers to Learning Recognized by Instructors and Mitigated during Post-Simulator Debriefings [D] . Pruchnicki, Shawn Allen 2018

机译：改进便利的汇报-在模拟后汇报中如何减少教师的学习障碍
6. 310-Helix Conformation Facilitates the Transition of a Voltage Sensor S4 Segment toward the Down State [O] . Christine S. Schwaiger, Pär Bjelkmar, Berk Hess, 2011

机译：310-螺旋构形有助于电压传感器S4段向向下状态的过渡
7. Structural Transition from Alpha- to 3_10-Helix Reduces the Free Energy Required for S4 Translation in Kv1.2/2.1 Voltage Sensors, and F233 Appears to Responsible for the Gating Barrier [O] . Schwaiger Christine S., Bjelkmar Pär, Hess Berk, 2010

机译：从Alpha-螺旋到3_10-螺旋的结构转变减少了Kv1.2 / 2.1电压传感器中S4转换所需的自由能，并且F233似乎对门控屏障负责

Microsecond Simulations Indicate 3_10 Helix Transition Facilitates Translation of the S4 Segment of Kv1.2 and Suggest a Hydrophobic Gating Barrier

著录项

引文网络

相似文献

相关主题

期刊订阅