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Substitution of a hydrophobic residue alters the conformational stability of Shaker K+ channels during gating and assembly

机译：疏水残基的取代会在选通和组装过程中改变Shaker K +通道的构象稳定性

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McCormack K.; Lin L.; Sigworth F.J.;
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年度 1993
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1. Microheterogeneity in heteromultimeric assemblies formed by Shaker (Kv1) and Shaw (Kv3) subfamilies of voltage-gated K+ channels. [J] . Shahidullah M, Hoshi N, Yokoyama S, The Royal Society Proceedings B: Biological Sciences . 1995,第1362期

机译：由电压门控K +通道的Shaker（Kv1）和Shaw（Kv3）子族形成的异源多聚体组装中的微异质性。
2. Contribution of the central hydrophobic residue in the PXP motif of voltage-dependent K+ channels to S6 flexibility and gating properties [J] . Imbrici Paola, Grottesi Alessandro, DAdamo Maria Cristina, Channels . 2009,第1期

机译：电压依赖性K +通道的PXP基序中的中央疏水残基对S6柔性和门控性能的贡献
3. Built for speed Molecular properties of the voltage sensor domain underlie the rapid activation of voltage-gated Na+ channels compared with Shaker-type K+ channels [J] . Braun Andrew P. Channels . 2013,第6期

机译：基于电压传感器域的速度分子特性，利于电压门控Na +通道的快速激活与振动型K +通道相比
4. 20(S)-ginsenoside Rg3 Inhibits Human Glioma Cell Growth Through the Suppression of Voltage-gated K+ Channels [C] . Qin Ru, Xiang Tian, Yuxjang Wu International Conference on Applied Sciences, Engineering and Technology . 2014

机译：20（s） - 喹啉酯RG3通过抑制电压门控K +通道抑制人胶质瘤细胞生长
5. NMR Study of the Temperature Sensitivity of an Engineered Temperature-Sensing Shaker K+ Channel [D] . Chen, Hongbo . 2019

机译：NMR研究了工程温度传感振动筛K +通道的温度敏感性
6. Substitution of a hydrophobic residue alters the conformational stability of Shaker K+ channels during gating and assembly. [O] . K McCormack, L Lin, F J Sigworth 1993

机译：疏水残基的取代会在选通和组装过程中改变Shaker K +通道的构象稳定性。
7. A role for hydrophobic residues in the voltage-dependent gating of Shaker K+ channels. [O] . McCormack, K, Tanouye, M A, Iverson, L E, 1991

机译：疏水残基在振荡器K +通道的电压依赖性门控中的作用。

Substitution of a hydrophobic residue alters the conformational stability of Shaker K+ channels during gating and assembly

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