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Light-induced Recovery of Effective Carrier Lifetime in Boron-doped Czochralski Silicon at Room Temperature

机译：室温掺杂硼的直拉硅中光诱导有效载流子寿命的恢复

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Ichikawa Hiroaki; Takahashi Isao; Usami Noritaka; Shirasawa Katsuhiko; Takato Hidetaka;
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1. Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride [J] . Wang Hongzhe, Chen Chao, Pan Miao, Applied Surface Science . 2015,第DECa1PTaB期

机译：光诱导掺硼氮化硅钝化的掺硼切克劳斯基硅中少数载流子寿命的增加
2. Effect of Thermal Annealing on Light-Induced Minority Carrier Lifetime Enhancement in Boron-Doped Czochralski Silicon [J] . WANG Hong-Zhe, ZHENG Song-Sheng, CHEN Chao 中国物理快报：英文版 . 2015,第010期

机译：热退火对掺硼切克劳斯基硅中光诱导少数载流子寿命延长的影响
3. Light-induced degradation and metastable-state recovery with reaction kinetics modeling in boron-doped Czochralski silicon solar cells [J] . Kim Soo Min, Chun Seungju, Bae Suhyun, Applied Physics Letters . 2014,第8期

机译：硼掺杂的切克劳斯基硅太阳能电池中反应诱导动力学模型的光诱导降解和亚稳态恢复
4. Light-induced recovery of effective carrier lifetime in boron-doped Czochralski silicon at room temperature [C] . Hiroaki Ichikawa, Isao Takahashi, Noritaka Usami International Conference on Crystalline Silicon Photovoltaics . 2016

机译：在室温下光引起硼掺杂Czochralski硅的有效载体寿命的回收
5. Measurement of minority carrier lifetimes in nanocrystalline silicon devices using reverse-recovery transient method. [D] . Reusswig, Philip David. 2008

机译：使用反向恢复瞬态方法测量纳米晶硅器件中少数载流子的寿命。
6. Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride [O] . Daniel Hiller, Julian López-Vidrier, Keita Nomoto, 2018

机译：由磷和硼掺杂的富硅氧化物和氮氧化物生长的硅纳米晶体中没有自由载流子
7. Light-induced Lifetime Degradation in Boron-doped Czochralski Silicon: Are Oxygen Dimers Involved? [O] . Voronkov Vladimir V., Falster Robert, Bothe Karsten, 2013

机译：掺硼的直拉硅中的光诱导寿命降解：是否涉及氧二聚体？

Light-induced Recovery of Effective Carrier Lifetime in Boron-doped Czochralski Silicon at Room Temperature

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