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Characterization of top barrier thickness from gate capacitance of high mobility III-V semiconductor MOS-HEMT devices

机译：从高迁移率III-V半导体MOS-HEMT器件的栅极电容表征顶部势垒厚度

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Mim Nugaira Gahan; Kutub Sayeem Bin; Haque Anisul;
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1. Characterization of top barrier thickness from gate capacitance of high mobility III-V semiconductor MOS-HEMT devices [J] . Nugaira Gahan Mim, Sayeem Bin Kutub, Anisul Haque Results in Physics . 2016,第1期

机译：从高迁移率III-V半导体MOS-HEMT器件的栅极电容表征顶部势垒厚度
2. Effect of Barrier Layer Thickness on AlGaN/GaN Double Gate MOS-HEMT Device Performance for High-Frequency Application [J] . Khan A. B., Anjum S. G., Siddiqui M. J. Journal of Nanoelectronics and Optoelectronics . 2018,第1期

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Characterization of top barrier thickness from gate capacitance of high mobility III-V semiconductor MOS-HEMT devices

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