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Preparation and characterization of a dual-layer carbon film on 6H-SiC wafer using carbide-derived carbon process with subsequent chemical vapor deposition

机译：使用碳化物衍生的碳工艺并随后进行化学气相沉积，在6H-SiC晶片上制备双层碳膜并进行表征

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Sui Jian; Liu Xiufang;
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1. Preparation and characterization of a dual-layer carbon film on 6H-SiC wafer using carbide-derived carbon process with subsequent chemical vapor deposition☆ [J] . Jian Sui, Xiufang Liu Surface & Coatings Technology . 2013,第Null期

机译：利用碳化物衍生的碳工艺和随后的化学气相沉积法在6H-SiC晶片上制备双层碳膜并进行表征☆
2. The formation of a dual-layer carbon film on silicon carbide using a combination of carbide-derived carbon process and chemical vapor deposition in a CCl4 - containing atmosphere [J] . Jian Sui, Jinjun Lu Carbon: An International Journal Sponsored by the American Carbon Society . 2011,第2期

机译：在含CCl4的气氛中，结合碳化物衍生的碳工艺和化学气相沉积在碳化硅上形成双层碳膜。
3. Remote hydrogen microwave plasma chemical vapor deposition of silicon carbonitride films from a (dimethylamino)dimethylsilane precursor: Characterization of the process, chemical structure, and surface morphology of the film [J] . I. Blaszczyk-Lezak, A.M. Wrobel, M.P.M. Kivitorma Diamond and Related Materials . 2006,第9期

机译：从（二甲基氨基）二甲基硅烷前体进行的远程氢微波等离子体化学气相沉积碳氮化硅膜：膜的工艺，化学结构和表面形态的表征
4. Effects of preparation and thermal stability on hydrogenated amorphous carbon films by microwave plasma chemical vapor deposition [C] . Haiying Xu, Caixia Kan, Fengming Pan International Conference on Textile Engineering and Materials . 2014

机译：微波等离子体化学气相沉积制备和热稳定性对氢化非晶碳膜的影响
5. Characterization of amorphous silicon carbide and silicon carbonitride thin films synthesized by polymer-source chemical vapor deposition. Mechanical structural and metal-interface properties [D] . Awad, Yousef 2006

机译：通过聚合物源化学气相沉积合成的非晶碳化硅和碳氮化硅薄膜的表征。机械结构和金属界面性能
6. Immobilization of carbon nanotubes on functionalized graphene film grown by chemical vapor deposition and characterization of the hybrid material [O] . Prashanta Dhoj Adhikari, Seunghan Jeon, Myoung-Jun Cha, 2014

机译：通过化学气相沉积和杂化材料表征将碳纳米管固定在功能化石墨烯薄膜上
7. Characterization of porosity and dielectric constant of fluorocarbon porous films synthesized by using plasma-enhanced chemical vapor deposition and solvent process [O] . Takahashi Kazuo, Mitamura Takashi, Ono Kouichi, 2003

机译：等离子体增强化学气相沉积和溶剂法合成碳氟化合物多孔膜的孔隙率和介电常数

Preparation and characterization of a dual-layer carbon film on 6H-SiC wafer using carbide-derived carbon process with subsequent chemical vapor deposition

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