首页> 外文OA文献 >Structural Transition from Alpha- to 3_10-Helix Reduces the Free Energy Required for S4 Translation in Kv1.2/2.1 Voltage Sensors, and F233 Appears to Responsible for the Gating Barrier

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Structural Transition from Alpha- to 3_10-Helix Reduces the Free Energy Required for S4 Translation in Kv1.2/2.1 Voltage Sensors, and F233 Appears to Responsible for the Gating Barrier

机译：从Alpha-螺旋到3_10-螺旋的结构转变减少了Kv1.2 / 2.1电压传感器中S4转换所需的自由能，并且F233似乎对门控屏障负责

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Schwaiger Christine S.; Bjelkmar Pär; Hess Berk; Lindahl Erik;
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2. The Free Energy Barrier for Arginine Gating Charge Translation Is Altered by Mutations in the Voltage Sensor Domain [O] . Christine S. Schwaiger, Sara I. Börjesson, Berk Hess, -1

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3. Microsecond Simulations Indicate 3_10 Helix Transition Facilitates Translation of the S4 Segment of Kv1.2 and Suggest a Hydrophobic Gating Barrier [O] . Lindahl Erik, Schwaiger Christine, Bjelkmar Pär 2010

机译：微秒模拟表明3_10螺旋过渡有助于Kv1.2的S4片段的翻译，并建议疏水门控障碍

Structural Transition from Alpha- to 3_10-Helix Reduces the Free Energy Required for S4 Translation in Kv1.2/2.1 Voltage Sensors, and F233 Appears to Responsible for the Gating Barrier

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